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| Lithography
TWINSCAN |
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| The TWINSCAN XT:1000H 248-nm Step-and-Scan system is a new dual-stage KrF lithography tool with the highest NA and productivity in the industry, designed for 200-mm and 300-mm wafer production.
Combining the imaging power of the variable 0.93-NA Carl Zeiss Starlith 4X reduction lens with AERIAL-E illuminator technology, the XT:1000H extends volume-proven KrF technology to < 80-nm resolution. Extending critical KrF technology reduces customer’s cost per layer while benefiting from mature KrF processing.
Highly line-narrowed 40-W KrF lasers with variable frequency control, in combination with the high optical transmission of the optical system, provide a production throughput of 165 300-mm wph with the lowest possible cost of operation.
The XT:1000H is ideal for metal, via and implant layers at the 4X-nm technology node and beyond, both memory and logic applications. In addition, imaging matching to other TWINSCAN KrF systems and excellent overlay matching to TWINSCAN ArF and KrF systems is provided enabling seamless integration in a high volume manufacturing environment. |
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Key Features and Benefits
Variable 0.93-NA 248-nm Projection Lens
In-line catadioptric lens design with advanced lens manipulators, supporting full 26x33-mm field, 4X reduction and reticle compatibility with existing refractive designs.
AERIAL-E Illuminator
Enables continuous-variable conventional and off-axis illumination with an extended zoom maintaining high throughput.
Superior Overlay
The XT:1000H is equipped with the latest overlay improvements resulting in single machine overlay of < 6 nm and matched machine overlay of < 10 nm.
LithoGuide ILIAS
Very accurate system set-up and sophisticated monitoring of imaging parameters.
High-Speed Dual-Stage Technology
Industry leading throughput for high volume manufacturing enabling highest number of good wafers per day.
40-W KrF Laser Technology With Frequency Control
The perfect combination of high laser power for high throughput and efficient use of laser pulses for the lowest possible laser cost of operation. |
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| Lens | Field Size | Overlay | Throughput |
| NA | Resolution | X & Y | 16-point
Alignment | 300 mm Wafers
125 Exp., 50 mJ/cm2 |
Variable
0.5 to 0.93 | < 80 nm | 26 X 33 mm | < 6 nm | > 165 wph |
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