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TWINSCAN NXE:3400B

  • Projection Lens
  • Illumination System
  • Overlay
  • Focus Control and Field-by-Field Leveling
  • Throughput
  • User Interface LINUX Architecture
  • Plasma Source

The TWINSCAN NXE:3400B will support EUV volume production at the 7 and 5 nm nodes. Combining productivity, excellent image resolution, matched overlay to EUV NXE and ArFi NXT tools and focus performance, the TWINSCAN NXE:3400B provides lithography capability complementary to ASML’s ArFi technology.

Improvements on the EUV source industrialization, overlay and focus enable a robust solution for cost effective volume production from 2018/2019 onwards.

The NXE Step-and-Scan systems use 13.5 nm EUV light, generated by a tin-based plasma source. The systems feature all-reflective 4x reduction lens assemblies from Carl Zeiss SMT with a maximum exposure field of 26 mm by 33 mm.

The NXE:3400B will be equipped with projection optics with NA 0.33 and a new illuminator with operating range sigma 0.06 - 1 to maintain high productivity while enabling low-k1 and a resolution of 13 nm.

In-situ measurement and corrections per wafer of the optics and stages enable maximum imaging performance of overlay and CDU for each wafer exposed when imaging at low-k1.

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