ArFi light source
≤ 38 nm
.85 - 1.35
Projection optics (NA)
Wafers per hour
Key features & benefits
Like the TWINSCAN NXT:1970Ci, the TWINSCAN NXT:1965Ci Step-and-Scan system is a high-productivity, dual-stage immersion lithography tool designed for volume production 300 mm wafers at the sub 20 nm nodes.
By combining high productivity and excellent image resolution, the TWINSCAN NXT: 1965Ci addresses double and multiple patterning requirements, providing our customers with a cost-effective solution for the sub 20 nm nodes.
01. Increased productivity
In this system, novel gas lifetime extensions reduce machine downtime and reinforce proven 6 kHz ArF laser technology to provide high power to support high throughput. Immersion hood design improvements widen the window to optimize defectivity using low contact angle resists without topcoat.
Together with the TWINSCAN NXT:1965Ci maintenance scheduler, a comprehensive service package optimizes system availability by taking advantage of system idle time to perform required routine maintenance.
The increased stiffness of the TWINSCAN NXT:1965Ci planar Dual-Stage delivers increased speed and acceleration thus allowing a faster Step-and-Scan sequence. Together with a faster chuck swap the new design offers a major step forward in productivity. In addition, a stringent focus on serviceability has led to a design that is easily accessible if needed.
02. Exceptional optics
Building on the successful in-line catadioptric lens design concept of the TWINSCAN NXT:1960Bi, the TWINSCAN NXT:1965Ci includes a 1.35 NA 193 nm catadioptric projection lens that can achieve production resolutions down to 40 nm (C-quad) and 38 nm (dipole) and an in-line design supporting full 26 x 33-mm field size, 4X reduction and reticle compatibility with existing designs.
Lens elements are equipped with manipulators to correct for optical aberrations, thus enabling maximum productivity for low-k1 applications. The FlexRay Prepared Illuminator allows maximum flexibility by extending the range of conventional and off-axis illumination to enable advanced pupil shaping for low-k1 imaging.
03. Imaging performance
The NXT:1965Ci can achieve a ≤ 2.5 nm single-machine (dedicated chuck) full-wafer-coverage overlay, and a ≤ 4.5 nm matched-machine (to reference wafer) full-wafer-coverage overlay.
The system’s Parallel ILIAS (PARIS) sensor allows customers to make parallel measurements of optical aberrations throughout the projection slit, which enables more accurate alignment, improved reticle heating correction and on-the-fly lens heating correction.