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ASML TWINSCAN XT:1460K DUV lithography machine

DUV LITHOGRAPHY SYSTEMS

TWINSCAN XT:1460K

The TWINSCAN XT:1460K is ASML's latest-generation dual-stage ‘dry’ lithography system, offering excellent overlay and imaging performance at high productivity.

193 nm

ArFi light source

≤ 65 nm

Resolution

0.93 NA

Projection lens

≥ 205

Wafers per hour

Key features & benefits

The TWINSCAN XT:1460K 193 nm step-and-scan system is a high-productivity, dual-stage ArF lithography tool designed for volume 300 mm wafer production at 65 nm resolution. The TWINSCAN XT:1460K contains a variable 0.93 NA 193 nm projection lens with advanced lens manipulators.

The dual wafer-stage technology of the TWINSCAN platform enables the exposure of one wafer and the alignment of the next wafer to take place in parallel, virtually eliminating overhead time and allowing for continuous patterning of wafers for maximum productivity.

 

The tool delivers excellent CD uniformity, industry-leading overlay and long-term performance stability.

01. Productivity

A standardly delivered 45 W ArF laser with variable frequency control, in combination with the high optical transmission of the complete system, provides a production throughput of 205 wph (300 mm wafers).


02. Optics

The TWINSCAN XT:1460K system combines the imaging power of a variable 0.65–0.93 NA Carl Zeiss Starlith 4X reduction lens with AERIAL-P illuminator technology, extending ArF technology beyond the 65 nm technology node.


03. Imaging performance

The system can achieve a production resolution down to 57 nm with polarized illumination. Equipped with the latest overlay improvements, the TWINSCAN XT:1460K can achieve a dedicated chuck overlay of ≤ 3.5 nm and a matched machine overlay of ≤ 5 nm with the TOP XT:1460K package installed. 

 

The off-line leveling system guarantees superior focus control over the full wafer, including edge dies. The tool is prepared to operate at extreme low-k1 values, delivering excellent CD uniformity, industry-leading overlay and long-term performance stability.