The TWINSCAN EXE:5200B is the second 0.55 NA, or ‘High NA’, EUV lithography system and the successor to the TWINSCAN EXE:5000. It combines overlay improvements with an increase in productivity.
With 40% more imaging contrast than NXE systems and 8 nm resolution, the EXE:5200B will enable chipmakers to print with a single exposure features 1.7 times smaller – and therefore achieve transistor densities 2.9 times higher – than those possible using TWINSCAN NXE systems. This helps to reduce process complexity in high-volume manufacturing to increase wafer output in customer fabs.
An improved EUV light source is behind the EXE:5200B’s higher productivity. By delivering increased power at the wafer level, the system is able to expose wafers more quickly, which translates to a higher system throughput. The EXE:5200B also features improved projection optics that were developed in cooperation with our strategic partner ZEISS SMT. Their design and manufacturing is optimized to reduce aberrations, thereby maximizing imaging and overlay performance.
