The TWINSCAN NXE:3600D supports EUV volume production at the 5 and 3 nm Logic nodes and leading-edge DRAM nodes.

13.5 nm

EUV light wavelength

13 nm


0.33 NA

Projection optics

≥ 160

Wafers per hour

At dose: 30 mJ/cm2

Key features & benefits

The TWINSCAN NXE:3600D combines imaging and overlay improvements with a 15% to 20% productivity improvement capability when compared to its predecessor, the NXE:3400C at dose 30mJ/cm2. The EUV lithography solutions provided by the TWINSCAN NXE:3600D are complementary to those provided by our TWINSCAN NXT systems based on ArF immersion technology.

The NXE platform uses 13.5 nm EUV light, generated by a tin-based plasma source, to expose 300 mm wafers with a max exposure field size of 26 mm x 33 mm. The NXE:3600D is equipped with reflective projection optics with a numerical aperture (NA) of 0.33. The flexible mask illumination optics module supports low-k1 applications while maintaining high productivity.

The combination of in-situ measurements and per-wafer correction capability of optics and stages enables optimized imaging and overlay performance for each exposed wafer. This takes place at high throughput, because ASML TWINSCAN systems allow for the measurement of wafer characteristics at the metrology position, while another just-measured wafer is being exposed.