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ASML TWINSCAN NXE:3400B EUV lithography machine

EUV LITHOGRAPHY SYSTEMS

TWINSCAN NXE:3400B

ASML’s TWINSCAN NXE:3400B supports EUV volume production at the 7 and 5 nm nodes.

13.5 nm

EUV light wavelength

13 nm

Resolution

0.33 NA

Projection optics

≥ 125

Wafers per hour

Key features & benefits

The TWINSCAN NXE:3400B supports EUV volume production at the 7 and 5 nm nodes.

Combining productivity, excellent image resolution, matched overlay to EUV NXE and ArFi NXT tools and focus performance, the NXE:3400B provides lithography capability complementary to ASML’s ArFi technology.

01. Productivity

The 300 mm wafer throughput target specification for the NXE:3400B is larger than or equal to 125 wafers per hour under the following conditions: Dose: 20mJ/cm2, die size: 26 x 33 mm, 96 shots.


02. Optics

The TWINSCAN NXE:3400B Step & Scan system includes Zeiss 4x reduction EUV optics with a Numerical Aperture (NA) of 0.33 and a maximum scanned exposure field size of 26 x 33 mm.

 

The NXE:3400B illumination is designed to extend the off-axis illumination imaging capabilities with advanced freeform pupil shaping for low-k1 imaging at optimal productivity. In addition, the operating range sigma was increased from 0.2 – 0.9 to 0.06 – 1.0 to make optimal use of the projection lens imaging capabilities.


03. Imaging performance

The NXE:3400B can achieve a dedicated chuck overlay of 1.4 nm and a matched-machine overlay of 2 nm. Overlay accuracy is measured over the whole field and over the whole wafer.

 

Wafer alignment occurs at the measurement position with target detection using SMASH alignment sensors with ASML's proven phase grating alignment technique.

 

The NXE:3400B incorporates the same level sensor as its predecessor the NXE:3350B, based on UV light source that reduces height process dependencies from wafer film stack variations.