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Key features & benefits
The TWINSCAN NXE:3400C is the successor of the NXE:3400B and will support EUV volume production at the 7 and 5 nm nodes at a higher productivity.
Combining high productivity, excellent image resolution, matched overlay to EUV NXE and ArFi NXT tools and focus performance, the TWINSCAN NXE:3400C provides lithography capability complementary to ASML’s ArFi technology. Improvements on the EUV source industrialization, overlay, focus and productivity enable a robust solution for cost-effective volume production starting in the second half of 2019.
01. Productivity
The 300 mm wafer throughput specification for the NXE:3400C is larger than or equal to 170 wafers per hour at a dose of 20 mJ/cm2. Throughput is larger than or equal to 135 wafers per hour at a dose of 30 mJ/cm2.
02. Optics
The NXE:3400C features an all-reflective 4x reduction lens assembly from Zeiss with a maximum exposure field of 26 x 33 mm.
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03. Imaging performance
The NXE:3400C can achieve a dedicated chuck overlay of 1.4 nm and a matched-machine overlay of 1.5 nm.
